# ISCN28D Silicon NPN Power Transistor

## Description
· DPAK for surface mount applications
· Designed for general purpose amplifier and low-speed switching applications
· Minimum lot-to-lot variations for robust device performance and reliable operation

## Absolute Maximum Ratings (Ta=25°C)
· VCBO (Collector-Base Voltage): 100 V
· VCEO (Collector-Emitter Voltage): 100 V
· VEBO (Emitter-Base Voltage): 5 V
· IC (Collector Current - Continuous): 6 A
· ICM (Collector Current - Peak): 10 A
· IB (Base Current): 2 A
· PC (Collector Power Dissipation): 20 W (TC=25°C), 2 W (Ta=25°C)
· Tj (Junction Temperature): 150 °C
· Tstg (Storage Temperature Range): -65~150 °C

## Thermal Characteristics
· Rthj-c (Thermal Resistance, Junction to Case): 6.25 °C/W

## Electrical Characteristics (TC=25°C unless otherwise specified)
· VCEO(SUS) (Collector-Emitter Sustaining Voltage): 100 V (IC=30mA; IB=0)
· VCE(sat) (Collector-Emitter Saturation Voltage): 1.5 V (IC=6A; IB=0.6A)
· VBE(on) (Base-Emitter On Voltage): 2.0 V (IC=6A; VCE=4V)
· ICBO (Collector Cutoff Current): 10 uA (VCB=100V; IE=0)
· ICEO (Collector Cutoff Current): 50 uA (VCE=60V; IB=0)
· IEBO (Emitter Cutoff Current): 0.5 mA (VEB=5V; IC=0)
· hFE-1 (DC Current Gain): 30 (IC=0.3A; VCE=4V)
· hFE-2 (DC Current Gain): 15-75 (IC=3A; VCE=4V)
· fT (Current-Gain—Bandwidth Product): 3 MHz (IC=0.5A; VCE=10V)