# BC856/BC857/BC858 PNP Silicon Transistor

## Features
️· Suitable for automatic insertion in thick and thin-film circuits
️· Complement to BC846/BC847/BC848
️· Pb-free plating options available (BC856L/BC857L/BC858L)

## Ordering Information
️· Package Type: SOT-23
️· Pin Assignment: Emitter (1), Base (2), Collector (3)
️· Packing: Tape Reel
️· Order Number Format: BC856-x-AE3-R / BC856L-x-AE3-R (x denotes rank)

## Absolute Maximum Ratings (Ta=25°C)
️· VCBO (Collector-Base Voltage):
- BC856: -80V
- BC857: -50V
- BC858: -30V
️· VCEO (Collector-Emitter Voltage):
- BC856: -65V
- BC857: -45V
- BC858: -30V
️· VEBO (Emitter-Base Voltage): -5V
️· PD (Collector Dissipation): 310mW
️· IC (Collector Current): -100mA
️· TJ (Junction Temperature): +150°C
️· TSTG (Storage Temperature): -40°C to +150°C

## Electrical Characteristics (Ta=25°C)
️· ICBO (Collector Cut-Off Current): -15nA
️· hFE (DC Current Gain): 110-800 (varies by rank)
- VCE = -5V, IC = -2mA
- VCE = -5V, IC = -10mA
️· VCE(SAT) (Collector-Emitter Saturation Voltage): -90mV to -650mV
- IC = -10mA, IB = -0.5mA
- IC = -100mA, IB = -5mA
️· VBE(SAT) (Base-Emitter Saturation Voltage): -700mV to -900mV
- IC = -10mA, IB = -0.5mA
- IC = -100mA, IB = -5mA
️· VBE(ON) (Base-Emitter On Voltage): -600mV to -800mV
- VCE = -5V, IC = -2mA
- VCE = -5V, IC = -10mA
️· fT (Current Gain Bandwidth Product): 150MHz
️· Cob (Output Capacitance): 6pF
️· NF (Noise Figure): 2-10dB

## hFE Classification
️· Rank A: 110-220
️· Rank B: 200-450
️· Rank C: 420-800