This document is a datasheet for the STMicroelectronics STD85N3LH5 N-Channel Power MOSFET. Here's a summary of the key information:

Device Overview:

️· Type: N-Channel Power MOSFET
️· Applications: Suitable for a wide range of switching, PWM, and load driving applications.
️· Package Options: TO-220, TO-252 (DPAK), and TO-252 (DPAK)
️· Key Features: Low gate charge, low on-resistance, high current capability.

Key Electrical Characteristics (typical values):

️· Vdss (Drain-Source Voltage): -30V
️· Id (Continuous Drain Current): -90A
️· Rds(on) (Drain-Source On-Resistance): ~5.5 mΩ (at Vgs = 10V, Id = -45A)
️· Vgs(th) (Gate Threshold Voltage): 2.5V - 4V
️· Qg (Total Gate Charge): 67 nC

Absolute Maximum Ratings:

️· Drain-Source Voltage (Vdss): -30V

️· Continuous Drain Current (Id): -90A
️· Pulsed Drain Current: -270A
️· Power Dissipation: 88W (TO-220), 62W (DPAK)

Packaging & Revision:

️· The datasheet includes detailed packaging information (tape and reel, bulk quantities).
️· The document includes a revision history showing changes made over different iterations of the datasheet.

Overall: The document provides comprehensive technical specifications, electrical characteristics, and packaging details for the STD85N3LH5 MOSFET, making it suitable for engineers designing power management and switching circuits.