# BUX10 Silicon NPN Power Transistor

## Description
· Low Collector Saturation Voltage
· High Switching Speed
· High Current Capability

## Applications
· Motor Control
· Linear and switching industrial equipment

## Absolute Maximum Ratings (Ta=25°C)
· VCBO: 160 V
· VCEO: 125 V
· VEBO: 7 V
· IC (Continuous): 25 A
· ICM (Peak): 30 A
· IB (Continuous): 5 A
· PC (Dissipation): 150 W
· Tj (Junction Temperature): 200 °C
· Tstg (Storage Temperature): -65 ~ 200 °C

## Thermal Characteristics
· Rth j-c (Junction to Case): 1.17 °C/W

## Electrical Characteristics (TC=25°C unless otherwise specified)
· VCEO(SUS) (Sustaining Voltage): 125 V (IC=0.2A, IB=0)
· V(BR)EBO (Breakdown Voltage): 7 V (IE=50mA, IC=0)
· VCE(sat)-1 (Saturation Voltage): 0.6 V (IC=10A, IB=1A)
· VCE(sat)-2 (Saturation Voltage): 1.2 V (IC=20A, IB=2A)
· VBE(sat) (Saturation Voltage): 2.0 V (IC=20A, IB=2A)
· ICEO (Cutoff Current): 1.5 mA (VCE=100V, IB=0)
· ICEX (Cutoff Current): 1.5/6.0 mA (VCE=160V, VBE=-1.5V, TC=125°C)
· IEBO (Cutoff Current): 1.0 mA (VEB=5V, IC=0)
· hFE-1 (DC Current Gain): 20-60 (IC=10A, VCE=2V)
· hFE-2 (DC Current Gain): 10+ (IC=20A, VCE=4V)
· fT (Bandwidth Product): 8 MHz (IC=1A, VCE=15V)

## Switching Times
· ton (Turn-on Time): 1.5 μs (IC=20A, IB1=2A, VCC=30V)
· ts (Storage Time): 1.2 μs (IC=20A, IB1=-IB2=2A, VCC=30V)
· tf (Fall Time): 0.3 μs (IC=20A, IB1=-IB2=2A, VCC=30V)

## Website
· www.iscsemi.cn