# UTC 2SA1015 PNP Epitaxial Silicon Transistor

## Features
️· Type: PNP Low Frequency Amplifier Transistor
️· BVCEO: -50V (Collector-Emitter Voltage)
️· Ic: Up to 150mA (Collector Current)
️· High hFE Linearity
️· Complement to 2SC1815

## Absolute Maximum Ratings (Ta=25°C)
️· VCBO (Collector-Base Voltage): -50V
️· VCEO (Collector-Emitter Voltage): -50V
️· VEBO (Emitter-Base Voltage): -5V
️· Pc (Collector Dissipation): 400mW
️· Ic (Collector Current): -150mA
️· IB (Base Current): -50mA
️· Tj (Junction Temperature): 125°C
️· TSTG (Storage Temperature): -65 ~ +150°C

## Electrical Characteristics (Ta=25°C)
️· BVCBO (Collector-Base Breakdown Voltage): -50V (Ic=-100µA, IE=0)
️· BVCEO (Collector-Emitter Breakdown Voltage): -50V (Ic=-10mA, IB=0)
️· BVEBO (Emitter-Base Breakdown Voltage): -5V (IE=-10µA, Ic=0)
️· ICBO (Collector Cut-off Current): -100nA (VCB=-50V, IE=0)
️· IEBO (Emitter Cut-off Current): -100nA (VEB=-5V, Ic=0)
️· hFE1 (DC Current Gain): 70 (VCE=-6V, Ic=-2mA)
️· hFE2 (DC Current Gain): 25-400 (VCE=-6V, Ic=-150mA)
️· VCE(sat) (Collector-Emitter Saturation Voltage): -0.1 to -0.3V (Ic=-100mA, IB=-10mA)
️· VBE(sat) (Base-Emitter Saturation Voltage): -1.1V (Ic=-100mA, IB=-10mA)
️· fT (Current Gain Bandwidth Product): 80MHz (VCE=-10V, Ic=-1mA)
️· Cob (Output Capacitance): 4.0-7.0pF (VCB=-10V, IE=0, f=1MHz)
️· NF (Noise Figure): 0.5-6dB (Ic=-0.1mA, VCE=-6V, RG=1kΩ, f=100Hz)

## hFE1 Classification
️· Y Range: 120-240
️· G Range: 200-400

## Pinout
️· 1: Emitter
️· 2: Collector
️· 3: Base