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# Example questions:
➢ For the mg1060-15 stacked pulsed gunn diode, what is the number of stacks, and how does this affect the minimum power output compared to a single diode?
➢ What is the typical pulse width and duty factor used for power measurements of the gunn diodes described in the document?
➢ What determines the operating frequency range of microsemi's gunn diodes, and how can a customer request a frequency outside the listed ranges?
1. General Information:
️· Product Type: Gunn Diodes (also known as Impatt Diodes)
️· Manufacturer: Microsemi (now part of Microchip Technology)
️· Datasheet Revision: Rev: 2009-01-19
️· Contact Information: 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
2. Device Categories & Frequency Ranges:
The datasheet lists Gunn diodes across various frequency bands, categorized as follows:
️· Frequency Bands:
- Ka Band (likely around 26.5 - 35 GHz)
- U Band (around 40 - 60 GHz)
- V and W Band (around 60.5 - 95 GHz)
- High Power Pulsed (around 9.3 GHz)
- Stacked Pulsed (also around 9.3 GHz)
3. Key Models & Specifications (selection from the tables – a full listing would be too extensive):
️· MG1017-16: 26.5-40 GHz, 50 mW min. power, 4.5 V operating voltage
️· MG1022-16: 40-60 GHz, 100 mW min. power, 4 V operating voltage
️· MG1037-16: 60.5 – 85 GHz, 50 mW min. power, 5 V operating voltage
️· MG1034-15: 9.3 GHz (High Power Pulsed), 5 mW min. power, 35 V operating voltage
️· MG1060-15: 9.3 GHz (Stacked Pulsed), 10 W min. power, 70 V operating voltage. This is a stacked configuration (likely two diodes combined).
4. Common Specifications (Based on Table Headers):
️· Operating Frequency (GHz): The specified frequency range for each diode.
️· Min. Power (mW or Watts): The minimum output power of the diode.
️· Operating Voltage (V): The voltage required for the diode to operate. This is a typical bias voltage.
️· Typical Operating Current (Amps): The typical current flow during operation (High Power Pulsed only).
️· Number of Stacks: Indicates if it is a stacked diode (Stacked Pulsed only).
️· Package Outline: Refers to the physical package type (M15 and M16 are mentioned).
5. Key Notes/Important Information:
️· Frequency Range Variations: The operating frequency is "specified to operate within a narrow range" of a customer-designated center frequency. This implies a tolerance.
️· Additional Frequencies Available: Microsemi offered additional frequencies upon request.
️· Polarity: The anode (positive terminal) is indicated by a cap, and the cathode (negative terminal) is the heatsink.
️· Power Measurement: Power measurements were typically done with a critically coupled test cavity.
️· Pulsed vs. Continuous Wave (CW): The datasheet distinguishes between "pulsed" and continuous wave operation. Pulsed diodes typically have higher power but are operated in short bursts.
️· Typcal Characteristics: This page of the document has a graph showing Power Output vs. Bias Voltage and I Bias Ratio vs. V Bias Ratio with varying temperature.
6. Package Types:
️· M15: Used for High Power Pulsed diodes.
️· M16: Used for the majority of the listed models.
1. General Information:
️· Product Type: Gunn Diodes (also known as Impatt Diodes)
️· Manufacturer: Microsemi (now part of Microchip Technology)
️· Datasheet Revision: Rev: 2009-01-19
️· Contact Information: 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
2. Device Categories & Frequency Ranges:
The datasheet lists Gunn diodes across various frequency bands, categorized as follows:
️· Frequency Bands:
- Ka Band (likely around 26.5 - 35 GHz)
- U Band (around 40 - 60 GHz)
- V and W Band (around 60.5 - 95 GHz)
- High Power Pulsed (around 9.3 GHz)
- Stacked Pulsed (also around 9.3 GHz)
3. Key Models & Specifications (selection from the tables – a full listing would be too extensive):
️· MG1017-16: 26.5-40 GHz, 50 mW min. power, 4.5 V operating voltage
️· MG1022-16: 40-60 GHz, 100 mW min. power, 4 V operating voltage
️· MG1037-16: 60.5 – 85 GHz, 50 mW min. power, 5 V operating voltage
️· MG1034-15: 9.3 GHz (High Power Pulsed), 5 mW min. power, 35 V operating voltage
️· MG1060-15: 9.3 GHz (Stacked Pulsed), 10 W min. power, 70 V operating voltage. This is a stacked configuration (likely two diodes combined).
4. Common Specifications (Based on Table Headers):
️· Operating Frequency (GHz): The specified frequency range for each diode.
️· Min. Power (mW or Watts): The minimum output power of the diode.
️· Operating Voltage (V): The voltage required for the diode to operate. This is a typical bias voltage.
️· Typical Operating Current (Amps): The typical current flow during operation (High Power Pulsed only).
️· Number of Stacks: Indicates if it is a stacked diode (Stacked Pulsed only).
️· Package Outline: Refers to the physical package type (M15 and M16 are mentioned).
5. Key Notes/Important Information:
️· Frequency Range Variations: The operating frequency is "specified to operate within a narrow range" of a customer-designated center frequency. This implies a tolerance.
️· Additional Frequencies Available: Microsemi offered additional frequencies upon request.
️· Polarity: The anode (positive terminal) is indicated by a cap, and the cathode (negative terminal) is the heatsink.
️· Power Measurement: Power measurements were typically done with a critically coupled test cavity.
️· Pulsed vs. Continuous Wave (CW): The datasheet distinguishes between "pulsed" and continuous wave operation. Pulsed diodes typically have higher power but are operated in short bursts.
️· Typcal Characteristics: This page of the document has a graph showing Power Output vs. Bias Voltage and I Bias Ratio vs. V Bias Ratio with varying temperature.
6. Package Types:
️· M15: Used for High Power Pulsed diodes.
️· M16: Used for the majority of the listed models.
| Part No. | MG1001 |
| Manufacturer | MICROSEMI |
| Size | 210 Kbytes |
| Pages | 4 pages |
| Description | GUNN Diodes Cathode Heat Sink |
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