STW9NA80 / New Jersey Semi-Conductor Products, Inc.

STW9NA80 Datasheet with Chat AI

Hello, Please ask a question about STW9NA80 Datasheet

# Example questions: ➢ What is the maximum allowable drain current (id) for the sth9na80fi at a case temperature of 25°c?
➢ What is the typical rds(on) value for the stw9na80 transistor?
➢ What is the maximum junction temperature (tj) specified for both the stw9na80 and sth9na80fi transistors?

Part No.	STW9NA80
Manufacturer	NJSEMI
Size	153 Kbytes
Pages	3 pages
Description	N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

Datasheet Summary with AI

# STW9NA80/STH9NA80FI Fast Power MOSFET Summary

## Device Type & Characteristics:

️· Type: N-Channel MOSFET
️· Voltage (Vds): 800V (for both STW9NA80 and STH9NA80FI)
️· RDS(on): < 1.0Ω (for STW9NA80), < 1.0Ω (for STH9NA80FI)
️· Current (Id): 9.1A (STW9NA80), 5.9A (STH9NA80FI)
️· Package: TO-247 / ISOWATT218
️· Avalanche Rated: Yes, with 100% avalanche testing at 100°C

## Applications:

️· High-current, high-speed switching
️· Switch-mode power supplies (SMPS)
️· DC-AC converters (e.g., for welding equipment)
️· Motor drive circuits

## Absolute Maximum Ratings:

️· Vds: 800V
️· Vdgr: 800V
️· Vgs: ±30V
️· Id: 9.1A (STW9NA80), 5.9A (STH9NA80FI)
️· Total Dissipation (Pd): 190W (STW9NA80), 80W (STH9NA80FI)
️· Junction Temperature (Tj): 150°C
️· Storage Temperature: -65°C to 150°C

## Thermal Characteristics:

️· Rthj-case (TO-247): 0.65°C/W
️· Rthj-ambient (TO-247): 1.56°C/W
️· Rthj-case (ISOWATT218): 0.1°C/W
️· Rthj-ambient (ISOWATT218): 300°C/W

## Electrical Characteristics (Key values):

️· V(BR)DSS: 800V
️· IDSS: 500µA (at 25°C)
️· IGSS: 100nA (at 25°C)
️· Vgs(th): 2.25V
️· Qg (Total Gate Charge): 115nC
️· td(on): ~45ns
️· tr: ~15ns
️· trr (Reverse Recovery Time): ~35ns