# STN4828

Dual N Channel Enhancement Mode MOSFET

# 10.0A

## DESCRIPTION

The STN4828 is a dual N-Channel logic enhancement mode power field effect transistor utilizing DMOS trench technology, optimized for low on-state resistance. Suited for low voltage applications, notebook power management, and battery-powered circuits.

## FEATURE

️· 60V/10.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V
️· 60V/6.0A, RDS(ON) = 35mΩ @VGS = 4.5V
️· Super high density cell design for extremely low RDS(ON)
️· Exceptional on-resistance and maximum DC current capability
️· SOP-8 package

## ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

Parameter	Symbol	Typical	Unit
Drain-Source Voltage	VDSS	60	V
Gate-Source Voltage	VGSS	±20	V
Continuous Drain Current (TJ=150℃)	ID	10.0/6.0	A
Pulsed Drain Current	IDM	30	A
Continuous Source Current	IS	10	A
Power Dissipation (TA=25℃/70℃)	PD	2.5/1.6	W
Operation Junction Temperature	TJ	-55/150	℃
Storage Temperature Range	TSTG	-55/150	℃
Thermal Resistance	RθJA	80	℃/W

## ELECTRICAL CHARACTERISTICS (Ta = 25℃)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0V,ID=250uA	60			V
Gate Threshold Voltage	VGS(th)	VDS=VGS,ID=250uA	0.8		2.5	V
Gate Leakage Current	IGSS	VDS=0V,VGS=±20V			±100	nA
On-State Drain Current	ID(on)	VDS≦5V,VGS=4.5V	25			A
Drain-Source On-Resistance	RDS(on)	VGS=10V, ID=10A<br>VGS=4.5V, ID=6A		0.030/0.035	0.038/0.045	Ω

## PACKAGE

️· SOP-8