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MSD39N60 Datasheet with Chat AI
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  • Part No.MSD39N60
    ManufacturerBWTECH
    Size559 Kbytes
    Pages6 pages
    Description30V N-Channel MOSFETs
    Datasheet Summary with AI

    1. General Description & Application:

    ️· Type: 30V N-Channel MOSFET
    ️· Intended Use: Designed for various power applications, likely including switching power supplies, motor control, and DC-DC converters.
    ️· Manufacturer: Bruckewell Technology

    2. Key Electrical Characteristics (at TJ = 25°C unless noted):

    ️· Voltage Ratings:
    - BVDSS (Drain-Source Breakdown Voltage): 30V
    - △BVDSS/△TJ (BVDSS Temperature Coefficient): 0.03 V/°C
    ️· Current Ratings:
    - IDSS (Drain-Source Leakage Current): 1-10 μA (dependent on temperature)
    - Continuous Drain Current (ID): 90A (per datasheet note)
    - Pulsed Drain Current (ISM): 180A
    ️· On-State Resistance (RDS(on)):
    - 1.9 - 2.6 mΩ (at VGS = 10V, ID = 30A)
    - 2.5 - 3.4 mΩ (at VGS = 4.5V, ID = 15A)
    ️· Gate-Source Threshold Voltage (VGS(th)): 1.2 - 2.5V
    ️· Input/Output Capacitances:
    - CISS (Input): 4800 - 8000 pF
    - COSS (Output): 735 - 1300 pF
    ️· Diode Characteristics (Body Diode):
    - Forward Voltage (VSD): < 1V
    - Reverse Recovery Charge (Qrr): 18-35nC

    3. Thermal Characteristics:

    ️· Junction to Ambient Thermal Resistance (RΘjA): 62 °C/W (This is high, indicating it needs good heatsinking)
    ️· Junction to Case Thermal Resistance (RθJC): 1.25 °C/W

    4. Dynamic Characteristics (Switching Performance):

    ️· td(on) (Turn-On Delay): 20 - 40 ns
    ️· tr (Rise Time): 32 - 60 ns
    ️· td(off) (Turn-Off Delay): 75 - 130 ns
    ️· tf (Fall Time): 28 - 55 ns

    5. Operational Limits (Absolute Maximum Ratings):

    ️· Operating Junction Temperature Range: -55 to +150°C
    ️· Storage Temperature Range: -55 to +150°C
    ️· Power Dissipation (Pd): 100W (at 25°C), Derates to 0.8W/°C above 25°C

    6. Important Notes & Considerations:

    ️· Heatsinking is Critical: The high junction-to-ambient thermal resistance indicates a need for effective heatsinking to prevent overheating.
    ️· Derating: Power dissipation must be derated at higher temperatures.
    ️· Repetitive Ratings: Some ratings (like ID) are for repetitive pulses and have limitations related to junction temperature.
    ️· Switching Speed: The device has moderate switching speeds. Consider these times in high-frequency applications.

    7. Figures & Diagrams (Refer to Datasheet):

    ️· Safe Operating Area (SOA) Curve: Shows allowed voltage/current combinations.
    ️· Transfer Characteristics: Drain current vs. gate-source voltage.
    ️· Dynamic Characteristics Diagrams: Switching times and capacitances.
    ️· Schematic Diagram



    This summary should provide a good overview of the MSD39N60 MOSFET. For detailed specifications and application guidelines, always refer to the complete datasheet from Bruckewell Technology.

    1. General Description & Application:

    ️· Type: 30V N-Channel MOSFET
    ️· Intended Use: Designed for various power applications, likely including switching power supplies, motor control, and DC-DC converters.
    ️· Manufacturer: Bruckewell Technology

    2. Key Electrical Characteristics (at TJ = 25°C unless noted):

    ️· Voltage Ratings:
    - BVDSS (Drain-Source Breakdown Voltage): 30V
    - △BVDSS/△TJ (BVDSS Temperature Coefficient): 0.03 V/°C
    ️· Current Ratings:
    - IDSS (Drain-Source Leakage Current): 1-10 μA (dependent on temperature)
    - Continuous Drain Current (ID): 90A (per datasheet note)
    - Pulsed Drain Current (ISM): 180A
    ️· On-State Resistance (RDS(on)):
    - 1.9 - 2.6 mΩ (at VGS = 10V, ID = 30A)
    - 2.5 - 3.4 mΩ (at VGS = 4.5V, ID = 15A)
    ️· Gate-Source Threshold Voltage (VGS(th)): 1.2 - 2.5V
    ️· Input/Output Capacitances:
    - CISS (Input): 4800 - 8000 pF
    - COSS (Output): 735 - 1300 pF
    ️· Diode Characteristics (Body Diode):
    - Forward Voltage (VSD): < 1V
    - Reverse Recovery Charge (Qrr): 18-35nC

    3. Thermal Characteristics:

    ️· Junction to Ambient Thermal Resistance (RΘjA): 62 °C/W (This is high, indicating it needs good heatsinking)
    ️· Junction to Case Thermal Resistance (RθJC): 1.25 °C/W

    4. Dynamic Characteristics (Switching Performance):

    ️· td(on) (Turn-On Delay): 20 - 40 ns
    ️· tr (Rise Time): 32 - 60 ns
    ️· td(off) (Turn-Off Delay): 75 - 130 ns
    ️· tf (Fall Time): 28 - 55 ns

    5. Operational Limits (Absolute Maximum Ratings):

    ️· Operating Junction Temperature Range: -55 to +150°C
    ️· Storage Temperature Range: -55 to +150°C
    ️· Power Dissipation (Pd): 100W (at 25°C), Derates to 0.8W/°C above 25°C

    6. Important Notes & Considerations:

    ️· Heatsinking is Critical: The high junction-to-ambient thermal resistance indicates a need for effective heatsinking to prevent overheating.
    ️· Derating: Power dissipation must be derated at higher temperatures.
    ️· Repetitive Ratings: Some ratings (like ID) are for repetitive pulses and have limitations related to junction temperature.
    ️· Switching Speed: The device has moderate switching speeds. Consider these times in high-frequency applications.

    7. Figures & Diagrams (Refer to Datasheet):

    ️· Safe Operating Area (SOA) Curve: Shows allowed voltage/current combinations.
    ️· Transfer Characteristics: Drain current vs. gate-source voltage.
    ️· Dynamic Characteristics Diagrams: Switching times and capacitances.
    ️· Schematic Diagram



    This summary should provide a good overview of the MSD39N60 MOSFET. For detailed specifications and application guidelines, always refer to the complete datasheet from Bruckewell Technology.

    Part No.MSD39N60
    ManufacturerBWTECH
    Size559 Kbytes
    Pages6 pages
    Description30V N-Channel MOSFETs
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