TSAL6102 Datasheet(PDF) - Vishay Siliconix

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TSAL6102 Datasheet (PDF) - Vishay Siliconix

TSAL6102 Datasheet PDF - Vishay Siliconix


Part #	TSAL6102

Download	TSAL6102 Download

File Size	113.18 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

TSAL6102 Datasheet (PDF)

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TSAL6102 Datasheet PDF - Vishay Siliconix


Part #	TSAL6102

Download	TSAL6102 Click to download

File Size	113.18 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

TSAL6102 Datasheet (HTML) - Vishay Siliconix

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TSAL6102 Product details

• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: φ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors

Similar Part No. - TSAL6102

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	TSAL6102	110Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022
	TSAL6102	110Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023
	TSAL6102	110Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022
	TSAL6102	110Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023

Similar Description - TSAL6102

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VSML3710	139Kb / 7P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 1.6, 22-Oct-14
	TSAL4400	114Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 1.9, 03-Nov-16
	TSAL6200	110Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 2.4, 13-Mar-14
	TSAL6100	108Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022
	VSML3710	138Kb / 7P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022
	TSAL6200	108Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023
	TSML1000	198Kb / 9P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 2.1, 13-Mar-14
	TSML1040	164Kb / 9P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023
	VSML3710	137Kb / 7P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023
	TSAL6100UL	116Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 1.0, 16-Jun-16
	TSML1000	196Kb / 9P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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