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UPC8178TK Datasheet(PDF) 3 Page - Renesas Technology Corp |
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UPC8178TK Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 29 page DESCRIPTION The µPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8178TK adopts 6-pin lead-less minimold package using same chip as the conventional µPC8178TB in 6-pin super minimold. TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50 %. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 40 dB TYP. @ f = 1.0 GHz ISL = 41 dB TYP. @ f = 1.9 GHz ISL = 42 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.0 dB TYP. @ f = 1.9 GHz GP = 11.0 dB TYP. @ f = 2.4 GHz • Gain 1 dB compression output power : PO (1 dB) = −5.5 dBm TYP. @ f = 1.0 GHz PO (1 dB) = −8.0 dBm TYP. @ f = 1.9 GHz PO (1 dB) = −8.0 dBm TYP. @ f = 2.4 GHz • Operating frequency : 0.1 to 2.4 GHz (Output port LC matching) • High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm) • Light weight : 3 mg (Standard value) APPLICAION • Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS Document No. PU10063EJ02V0DS (2nd edition) Date Published March 2005 CP(K) Printed in Japan NEC Compound Semiconductor Devices, Ltd. 2001, 2005 The mark shows major revised points. |
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