IRFZ44N datasheet(5/8 Pages) PHILIPS

Part #	IRFZ44N

Description	N-channel enhancement mode TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 8 page

Philips Semiconductors

Product specification

N-channel enhancement mode

IRFZ44N

TrenchMOS

TM transistor

Fig.11. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

Fig.13. Typical turn-on gate-charge characteristics.

V

GS = f(QG); conditions: ID = 50 A; parameter VDS

Fig.14. Typical reverse diode current.

I

F = f(VSDS); conditions: VGS = 0 V; parameter Tj

Fig.15. Normalised avalanche energy rating.

W

DSS% = f(Tmb); conditions: ID = 49 A

Fig.16. Avalanche energy test circuit.

01

23

45

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

Sub-Threshold Conduction

typ

2%

98%

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0

20

40

60

80

100

IF/A

VSDS/V

Tj/C =

175

25

0.01

0.1

1

10

100

0

.5

1

1.5

2

2.5

VDS/V

Ciss

Coss

Crss

20

40

60

80

100

120

140

160

180

Tmb / C

120

110

100

90

80

70

60

50

40

30

20

10

0

WDSS%

0

1020304050

0

2

4

6

8

10

12

VGS/V

QG/nC

VDS = 14V

VDS = 44V

L

T.U.T.

VDD

RGS

R 01

VDS

-ID/100

+

-

shunt

VGS

0

W

DSS = 0.5 ⋅ LID

2

⋅ BV

DSS/(BVDSS − VDD)

February 1999

5

Rev 1.000

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