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STM32F412RGT7 Datasheet(PDF) 117 Page - STMicroelectronics

Part # STM32F412RGT7
Description  Arm®-Cortex®-M4 32b MCUFPU, 125 DMIPS, 1MB Flash, 256KB RAM, USB OTG FS, 17 TIMs, 1 ADC, 17 comm. interfaces
PDF  201 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F412RGT7 Datasheet(HTML) 117 Page - STMicroelectronics

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DocID028087 Rev 7
117/201
STM32F412xE/G
Electrical characteristics
166
6.3.12
Memory characteristics
Flash memory
The characteristics are given at TA = -40 to 125 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 48. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Write / Erase 8-bit mode, VDD = 1.7 V
-
5
-
mA
Write / Erase 16-bit mode, VDD = 2.1 V
-
8
-
Write / Erase 32-bit mode, VDD = 3.3 V
-
12
-
Table 49. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16
100(2)
µs
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
400
800
ms
Program/erase parallelism
(PSIZE) = x 16
-
300
600
Program/erase parallelism
(PSIZE) = x 32
-
250
500
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
1200
2400
ms
Program/erase parallelism
(PSIZE) = x 16
-
700
1400
Program/erase parallelism
(PSIZE) = x 32
-
550
1100
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-2
4
s
Program/erase parallelism
(PSIZE) = x 16
-1.3
2.6
Program/erase parallelism
(PSIZE) = x 32
-1
2
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-16
32
s
Program/erase parallelism
(PSIZE) = x 16
-11
22
Program/erase parallelism
(PSIZE) = x 32
-8
16



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