MMBT6428LT1 datasheet(2/4 Pages) LRC

Part #	MMBT6428LT1

Description	Amplifier Transistors(NPN Silicon)

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Manufacturer	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

M22–2/4

MMBT6428LT1 MMBT6429LT1

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

hFE

––

(I C = 0.01 mAdc, V CE = 5.0 Vdc)

MMBT6428

250

—

MMBT6429

500

—

(I C = 0.1 mAdc, V CE = 5.0Vdc)

MMBT6428

250

650

MMBT6429

500

1250

(I C = 1.0 mAdc, V CE = 5.0Vdc)

MMBT6428

250

—

MMBT6429

500

—

(I C = 10 mAdc, V CE = 5.0Vdc)

MMBT6428

250

—

MMBT6429

500

—

Collector–Emitter Saturation Voltage

VCE(sat)

Vdc

(I C = 10 mAdc, I B = 0.5 mAdc)

––

0.2

(I C = 100 mAdc, I B = 0.5 mAdc)

––

0.6

Base–Emitter On Voltage

V BE(on)

0.56

0.66

Vdc

(I C = 1.0 mAdc, V CE = 5.0mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current Gain–Bandwidth Product

f

T

100

700

MHz

(V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz)

Output Capacitance

(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)

C obo

––

3.0

pF

Input Capacitance

C ibo

––

8.0

pF

(V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)

R S

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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