MMBT6428LT1 datasheet(1/4 Pages) LRC

Part #	MMBT6428LT1

Description	Amplifier Transistors(NPN Silicon)

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Manufacturer	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

M22–1/4

2

EMITTER

3

COLLECTOR

1

BASE

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

50

45

Vdc

Collector–Base Voltage

V CBO

60

55

Vdc

Emitter–Base Voltage

V EBO

6.0

Vdc

Collector Current — Continuous

I C

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

225

mW

TA = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

PD

300

mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ , Tstg

–55 to +150

°C

DEVICE MARKING

MMBT6428LT1 = 1KM, MMBT6429LT1 = 1L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

V (BR)CEO

Vdc

(I C = 1.0 mAdc, I B = 0)

MMBT6428

50

—

(I C = 1.0 mAdc, I B = 0)

MMBT6429

45

—

Collector–Base Breakdown Voltage

V (BR)CBO

Vdc

(I C = 0.1mAdc, I E = 0)

MMBT6428

60

—

(I C = 0.1mAdc, I E = 0)

MMBT6429

55

—

Collector Cutoff Current

I CBO

µAdc

( V CE = 30Vdc, )

—

0.1

Collector Cutoff Current

I CBO

µAdc

( V CB = 30Vdc, I E = 0 )

—

0.01

Emitter Cutoff Current

I EBO

—

0.01

µAdc

( V EB = 5.0Vdc, I C= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

6428LT1 6429LT1

1

3

2

MMBT6428LT1

MMBT6429LT1

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

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