| Manufacturer | Part # | Datasheet | Description |
 Motorola, Inc |
MTP20N06
|
209Kb/8P
|
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
|
|
MTP20N06V
|
209Kb/8P
|
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
|
|
MTP20N20
|
203Kb/8P
|
TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM
|
|
MTP20N20E
|
203Kb/8P
|
TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM
|
|
MTP23P06V
|
192Kb/8P
|
TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM
|
|
MTP27N10E
|
230Kb/8P
|
TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
|
|
MTP2955
|
116Kb/8P
|
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
|
|
MTP2955D
|
116Kb/8P
|
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
|
|
MTP2955E
|
207Kb/8P
|
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM
|
|
MTP2955V
|
116Kb/8P
|
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
|
|
MTP29N15E
|
75Kb/4P
|
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM
|
|
MTP2N20
|
176Kb/5P
|
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
|
MTP2N40E
|
217Kb/8P
|
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
|
|
MTP2N50E
|
244Kb/8P
|
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
|
|
MTP2N60
|
219Kb/8P
|
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
|
MTP2N60E
|
219Kb/8P
|
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
|
MTP2P50
|
230Kb/8P
|
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
|
|
MTP2P50E
|
230Kb/8P
|
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
|