# isc N-Channel MOSFET Transistor STI30N65M5

## Features

· Drain Current (I_D): 22A @ T_C = 25°C
· Drain-Source Voltage (V_DSS): 650V (Min)
· Static Drain-Source On-Resistance (R_DS(on)): 139 mΩ (Max)
· 100% Avalanche Tested
· Minimum Lot-to-Lot Variations

## Absolute Maximum Ratings (Ta=25°C)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	650	V
VGS	Gate-Source Voltage-Continuous	±25	V
ID	Drain Current-Continuous	22	A
IDM	Drain Current-Single Pluse	88	A
PD	Total Dissipation @TC=25℃	140	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	0.83	℃/W

## Electrical Characteristics (TC=25°C unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0; ID=1mA	650		V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID=0.25mA	3	5	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=11A		139	mΩ
IGSS	Gate-Body Leakage Current	VGS= ±25V;VDS= 0		±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS=650V; VGS=0<br>VDS=650V; VGS=0; Tj= 125℃		1<br>100	μA
VSD	Forward On-Voltage	IS=22A; VGS=0		1.5	V

## Applications

· Switching application

## Notice

· Intended for general electronic equipment.
· Not designed for specialized quality/reliability or hazardous/aerospace/medical applications. Contact ISC for such applications.
· ISC disclaims liability for product suitability or arising from its use.
· ISC website: www.iscsemi.com