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STI30N65M5 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # STI30N65M5
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STI30N65M5 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
STI30N65M5
FEATURES
·
Drain Current –ID=22A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 650V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 139mΩ(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
Low Drain-Source On-Resistance
APPLICATIONS
·
Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±
25
V
ID
Drain Current-Continuous
22
A
IDM
Drain Current-Single Pluse
88
A
PD
Total Dissipation @TC=25℃
140
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.83
℃
/W


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