# 2SC5353

## Description

Silicon NPN Triple Diffused Type (PCT process) for switching regulator and high voltage switching applications, as well as high-speed DC-DC converters.

## Absolute Maximum Ratings (Tc = 25°C)

️· Collector-Base Voltage (VCBO): 900 V
️· Collector-Emitter Voltage (VCEO): 800 V
️· Emitter-Base Voltage (VEBO): 7 V
️· Collector Current (IC): 3 A
️· Pulse Collector Current (ICP): 5 A
️· Base Current (IB): 1 A
️· Collector Power Dissipation (PC): 2.0 W (Ta = 25°C), 25 W (Tc = 25°C)
️· Junction Temperature (Tj): 150 °C
️· Storage Temperature (Tstg): -55 to 150 °C

## Electrical Characteristics (Tc = 25°C)

️· Collector Cut-off Current (ICBO): 100 μA (max)
️· Emitter Cut-off Current (IEBO): 10 μA (max)
️· Collector-Base Breakdown Voltage (V(BR)CBO): 900 V (min)
️· Collector-Emitter Breakdown Voltage (V(BR)CEO): 800 V (min)
️· DC Current Gain (hFE(1)): 10 (min) (VCE = 5 V, IC = 1 mA)
️· DC Current Gain (hFE(2)): 15 (min) (VCE = 5 V, IC = 0.15 A)
️· Collector-Emitter Saturation Voltage (VCE(sat)): 1.0 V (max) (IC = 1.2 A, IB = 0.24 A)
️· Base-Emitter Saturation Voltage (VBE(sat)): 1.3 V (max) (IC = 1.2 A, IB = 0.24 A)
️· Rise Time (tr): 0.7 μs (max)
️· Storage Time (tstg): 4.0 μs (max)
️· Fall Time (tf): 0.5 μs (max)

## Switching Characteristics

️· Test Conditions: VCE = 5 V, Tc = 25°C.

## Marking

️· Part number and lot number indicated on package.

## Safety Precautions

️· Follow appropriate safety standards when designing systems with this product.
️· Do not use in applications where failure could cause loss of life or bodily injury.
️· Comply with RoHS regulations.
️· Review the Toshiba Semiconductor Reliability Handbook for detailed guidance.