2SC5353_06 datasheet(2/5 Pages) TOSHIBA

Part #	2SC5353

Description	Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC5353

2006-11-10

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 720 V, IE = 0

―

100

μA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

―

μA

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IE = 0

900

―

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

800

―

hFE (1)

VCE = 5 V, IC = 1 mA

―

DC current gain

hFE (2)

VCE = 5 V, IC = 0.15 A

―

Collector-emitter saturation voltage

VCE (sat)

IC = 1.2 A, IB = 0.24 A

―

1.0

Base-emitter saturation voltage

VBE (sat)

IC = 1.2 A, IB = 0.24 A

―

1.3

Rise time

―

0.7

Storage time

tstg

―

4.0

Switching time

Fall time

IB1 = 0.24 A, IB2 = −0.48 A,

duty cycle ≤ 1%

―

0.5

μs

Marking

20 μs

VCC ≈ 360 V

Output

IB2

IB1

Input

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

C5353

Part No. (or abbreviation code)

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