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Hello, Please ask a question about IRFPC50LC Datasheet
# Example questions:
➢ What is the maximum drain current (id) under pulsed conditions, as depicted in figure 11?
➢ What test conditions are specified for the switching time test circuit shown in figure 10a?
➢ What package type is used for this device, and where can you find the detailed package outline information within the document?
| Part No. | IRFPC50LC |
| Manufacturer | IRF |
| Size | 333 Kbytes |
| Pages | 8 pages |
| Description | Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A) |
1. Key Parameters & General Information
️· Device Type: N-Channel MOSFET (Logic Level)
️· Voltage Rating: V<sub>DS</sub> (Drain-Source Voltage) - Not specifically stated, but implied to be a decent value for general-purpose switching.
️· Current Rating: I<sub>D</sub> (Drain Current) – High (specifically, see thermal characteristics section, where the datasheet mentions maximum drain current vs. case temperature).
️· Logic Level Gate Drive: Designed for operation with lower gate voltage signals (5V logic level drive).
️· Application: Suitable for a wide range of applications including switching, motor control, and more.
2. Electrical Characteristics (Selected Highlights)
️· V<sub>GS(th)</sub>: Gate-Source Threshold Voltage - Not Specified
️· R<sub>DS(on)</sub>: Drain-Source On-Resistance - Not Specified
️· Input Capacitance: C<sub>iss</sub>, C<sub>gs</sub>, C<sub>gd</sub> - Not Specified
️· Output Capacitance: C<sub>oss</sub>, C<sub>ds</sub> – Not Specified
️· Gate Charge: Not specified beyond the test circuit description.
️· Diode Characteristics: Forward Voltage (V<sub>SD</sub>) - Test circuit shown.
3. Thermal Characteristics
️· Maximum Drain Current vs. Case Temperature (I<sub>D</sub> vs. T<sub>C</sub>): Figure 12c shows how much drain current the device can handle as case temperature increases.
️· Maximum Effective Transient Thermal Impedance (Junction-to-Case) (R<sub>θJC(trans)</sub>): Figure 31 is the key - it outlines how quickly the junction temperature will rise during pulsed operation.
️· Starting Junction Temperature (T<sub>J(start)</sub>): Figure 12c shows this value versus drain current.
4. Test Circuits
️· Unclamped Inductive Test Circuit (Figure 9a and 9b): Used to test behavior under inductive loads (important for motor control, etc.)
️· Gate Charge Test Circuit (Figure 9a and 9b): Allows measurement of total gate charge.
️· Basic Gate Charge Waveform and Circuit (Figure 14): Illustrates the test setup for gate charge measurement.
️· Peak Diode Recovery dv/dt Test Circuit: Specifically targets dynamic diode performance.
5. Package Information
️· Package Type: TO-247AC
️· Marking Information: TO-247AC markings specified for identification.
6. Important Notes / Things Missing
️· No Absolute Maximum Ratings Table: The datasheet does *not* provide a table listing absolute maximum ratings (like maximum voltage, current, power dissipation, etc.). You're expected to infer these from the figures.
️· No Typical Characteristics Graphs: The datasheet relies heavily on figures to convey information, lacking the typical characteristic graphs usually found in more detailed datasheets (e.g., Rds(on) vs. gate voltage, capacitance vs. frequency).
️· No Detailed Waveform Analysis: Figure 9 provides waveforms for the Unclamped Inductive Test, but there is no detailed explanation of what those waveforms mean.
️· No Derating Information: The datasheet doesn't explicitly give derating information (how the performance changes as a function of temperature).
Summary of what the datasheet *focuses* on:
️· Transient thermal behavior
️· Performance under inductive loads
️· Basic gate charge information
️· Package and marking information
1. Key Parameters & General Information
️· Device Type: N-Channel MOSFET (Logic Level)
️· Voltage Rating: V<sub>DS</sub> (Drain-Source Voltage) - Not specifically stated, but implied to be a decent value for general-purpose switching.
️· Current Rating: I<sub>D</sub> (Drain Current) – High (specifically, see thermal characteristics section, where the datasheet mentions maximum drain current vs. case temperature).
️· Logic Level Gate Drive: Designed for operation with lower gate voltage signals (5V logic level drive).
️· Application: Suitable for a wide range of applications including switching, motor control, and more.
2. Electrical Characteristics (Selected Highlights)
️· V<sub>GS(th)</sub>: Gate-Source Threshold Voltage - Not Specified
️· R<sub>DS(on)</sub>: Drain-Source On-Resistance - Not Specified
️· Input Capacitance: C<sub>iss</sub>, C<sub>gs</sub>, C<sub>gd</sub> - Not Specified
️· Output Capacitance: C<sub>oss</sub>, C<sub>ds</sub> – Not Specified
️· Gate Charge: Not specified beyond the test circuit description.
️· Diode Characteristics: Forward Voltage (V<sub>SD</sub>) - Test circuit shown.
3. Thermal Characteristics
️· Maximum Drain Current vs. Case Temperature (I<sub>D</sub> vs. T<sub>C</sub>): Figure 12c shows how much drain current the device can handle as case temperature increases.
️· Maximum Effective Transient Thermal Impedance (Junction-to-Case) (R<sub>θJC(trans)</sub>): Figure 31 is the key - it outlines how quickly the junction temperature will rise during pulsed operation.
️· Starting Junction Temperature (T<sub>J(start)</sub>): Figure 12c shows this value versus drain current.
4. Test Circuits
️· Unclamped Inductive Test Circuit (Figure 9a and 9b): Used to test behavior under inductive loads (important for motor control, etc.)
️· Gate Charge Test Circuit (Figure 9a and 9b): Allows measurement of total gate charge.
️· Basic Gate Charge Waveform and Circuit (Figure 14): Illustrates the test setup for gate charge measurement.
️· Peak Diode Recovery dv/dt Test Circuit: Specifically targets dynamic diode performance.
5. Package Information
️· Package Type: TO-247AC
️· Marking Information: TO-247AC markings specified for identification.
6. Important Notes / Things Missing
️· No Absolute Maximum Ratings Table: The datasheet does *not* provide a table listing absolute maximum ratings (like maximum voltage, current, power dissipation, etc.). You're expected to infer these from the figures.
️· No Typical Characteristics Graphs: The datasheet relies heavily on figures to convey information, lacking the typical characteristic graphs usually found in more detailed datasheets (e.g., Rds(on) vs. gate voltage, capacitance vs. frequency).
️· No Detailed Waveform Analysis: Figure 9 provides waveforms for the Unclamped Inductive Test, but there is no detailed explanation of what those waveforms mean.
️· No Derating Information: The datasheet doesn't explicitly give derating information (how the performance changes as a function of temperature).
Summary of what the datasheet *focuses* on:
️· Transient thermal behavior
️· Performance under inductive loads
️· Basic gate charge information
️· Package and marking information
| Part No. | IRFPC50LC |
| Manufacturer | IRF |
| Size | 333 Kbytes |
| Pages | 8 pages |
| Description | Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A) |
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