Features
 Revolutionary semiconductor material - Silicon Carbide
 Benchmark switching behavior
 No reverse recovery/ No forward recovery
 Temperature independent switching behavior
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Junction Temperature range from -40°C to 175°C
 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements

Description
The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for
Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers,
this family of products shows improved efficiency over all load conditions resulting from both its thermal
characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement
Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in
the 650V voltage class.
 Enabling higher frequency / increased power density solutions
 Higher system reliability due to lower operating temperatures
 Reduced EMI

Potential Applications
 Traction inverter
 Booster / DCDC Converter
 On board Charger / PFC