Description
CMPA0527005F is a packaged gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). This device is matched to 50 ohms at the input and
unmatched at the output. This device operates from a 50 V rail
and is intended to be used as a predriver from 0.5 to 2.7 GHz. The
transistor is available in a 6 leaded flange package.
Features
• Up to 2.7 GHz Operation
• 8 W Typical Output Power
• 20 dB Small Signal Gain
• Application Circuit for 0.5 - 2.7 GHz
• 50% Efficiency
• 50 V Operation