GENERAL DESCRIPTION
SVF4N90F/MJ/T/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM high-voltage planar VDMOS technology. The
improved process and cell structure have been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.

FEATURES
 4A,900V,RDS(on)(typ.)=2.7@VGS=10V
 Low gate charge
 Low Crss
 Fast switching
 Improved dv/dt capability