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IRG4BC30FDPBF Datasheet (PDF) - International Rectifier
IRG4BC30FDPBF Datasheet PDF - International Rectifier
Part # IRG4BC30FDPBF
Download  IRG4BC30FDPBF Download
File Size   3177.53 Kbytes
Page   11 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

IRG4BC30FDPBF Datasheet (PDF)

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IRG4BC30FDPBF Datasheet PDF - International Rectifier

Part # IRG4BC30FDPBF
Download  IRG4BC30FDPBF Click to download

File Size   3177.53 Kbytes
Page   11 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

IRG4BC30FDPBF Datasheet (HTML) - International Rectifier


IRG4BC30FDPBF Product details

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features
• Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
• Lead-Free




Similar Part No. - IRG4BC30FDPBF

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397Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Similar Description - IRG4BC30FDPBF

ManufacturerPart #DatasheetDescription
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International Rectifier		 IRG4BC20U IRF-IRG4BC20U Datasheet
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167Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
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412Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
IRG4BC30K IRF-IRG4BC30K Datasheet
137Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRG4BC40U IRF-IRG4BC40U Datasheet
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IRG4PC30F IRF-IRG4PC30F Datasheet
145Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
IRG4PC30FD IRF-IRG4PC30FD Datasheet
210Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
IRG4PC40U IRF-IRG4PC40U Datasheet
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IRG4PC50F IRF-IRG4PC50F Datasheet
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About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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