1 Features
• Low on-resistance
• Ultra-low Qg and Qgd
• Ultra-small footprint (0402 case size)
– 1.0 mm × 0.6 mm
• Low profile
– 0.36-mm maximum height
• Integrated ESD protection diode
– Rated > 2-kV HBM
– Rated > 2-kV CDM
• Pb terminal plating
• Halogen free
• RoHS compliant

2 Applications
• Optimized for load switch applications
• Optimized for general purpose switching
applications
• Battery applications
• Handheld and mobile applications

3 Description
This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint
in many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.