| Manufacturer | Part # | Datasheet | Description |
 International Rectifier |
IRFZ48RSPBF
|
255Kb / 10P |
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )
|
 SeCoS Halbleitertechnol... |
SMG2330N
|
70Kb / 2P |
5.2A, 30V, RDS(ON) 32m N-Channel Enhancement MOSFET
|
|
SSE90N06-10P
|
617Kb / 4P |
90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET
|
|
SSE90P06-08P
|
81Kb / 2P |
-90A , -60V , RDS(ON) 12m P-Channel Enhancement Mode MOSFET
|
|
SSF7400
|
428Kb / 4P |
30V , 1.7A , RDS(ON) 85m廓 N-Ch Enhancement Mode Power MOSFET
|
|
STT3458N
|
425Kb / 4P |
3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET
|
|
STT3962NE
|
104Kb / 2P |
2.3A , 60V , RDS(ON) 0.153 N-Channel Enhancement Mode MOSFET
|
 Fairchild Semiconductor |
FQD2N90TF
|
1Mb / 9P |
N-Channel QFET짰 MOSFET 900 V, 1.7 A, 7.2 廓
|
 SeCoS Halbleitertechnol... |
SDT3A5N06-C
|
338Kb / 4P |
3.5A, 60V, RDS(on) 100 m(ohm) N-Channel Enhancement Mode Power MOSFET
|
|
SDT6N06-C
|
617Kb / 4P |
6A, 60V, RDS(on) 44 m(ohm) N-Channel Enhancement Mode Power MOSFET
|