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AM29LV081B-120EC Datasheet (PDF) - Advanced Micro Devices

AM29LV081B-120EC Datasheet PDF - Advanced Micro Devices
Part # AM29LV081B-120EC
Download  AM29LV081B-120EC Download
File Size   39.55 Kbytes
Page   6 Pages
Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices
Description 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory

AM29LV081B-120EC Datasheet (PDF)

Go To PDF Page Download Datasheet
AM29LV081B-120EC Datasheet PDF - Advanced Micro Devices

Part # AM29LV081B-120EC
Download  AM29LV081B-120EC Click to download

File Size   39.55 Kbytes
Page   6 Pages
Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices
Description 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory

AM29LV081B-120EC Datasheet (HTML) - Advanced Micro Devices


AM29LV081B-120EC Product details

GENERAL DESCRIPTION
The Am29LV081B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device is
offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only
a single, 3.0 volt VCCsupply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
    — 2.7 to 3.6 volt read and write operations for battery-powered applications
■ Manufactured on 0.32 µm process technology
    — Compatible with 0.5 µm Am29LV081 device
■ High performance
    — Access times as fast as 70 ns
■ Ultra low power consumption (typical values at 5 MHz)
    — 200 nA Automatic Sleep mode current
    — 200 nA standby mode current
    — 7 mA read current
    — 15 mA program/erase current
■ Flexible sector architecture
    — Sixteen 64 Kbyte sectors
    — Supports full chip erase
    — Sector Protection features:
          A hardware method of locking a sector to prevent any program
            or erase operations within that sector
          Sectors can be locked in-system or via programming equipment
          Temporary Sector Unprotect feature allows code changes
            in previously locked sectors
■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing multiple
        program command sequences
■ Embedded Algorithms
    — Embedded Erase algorithm automatically preprograms
        and erases the entire chip or any combination of designated sectors
    — Embedded Program algorithm automatically writes and verifies data
        at specified addresses
■ Minimum 1,000,000 write cycle guarantee per sector
■ 20-year data retention at 125°C
    — Reliable operation for the life of the system
■ Package option
    — 40-pin TSOP
■ Compatibility with JEDEC standards
    — Pinout and software compatible with single power supply Flash
    — Superior inadvertent write protection
■ Data# Polling and toggle bits
    — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
    — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends an erase operation to read data from, or program data to, a sector
        that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
    — Hardware method to reset the device to reading array data
■ Command sequence optimized for mass storage
    — Specific addresses not required for unlock cycles




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