Description

The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 25 Volt, 900–960 MHz Characteristics

   - Output Power = 1 Watt

   - Gain = 12 dB Min at 1 Watt

• Class A/AB Characteristics

• Gold Metallization

• Silicon Nitride Passivated

• Surface Mountable

• Available in Tape and Reel