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HSB0104YP Datasheet (PDF) - Hitachi Semiconductor
HSB0104YP Datasheet PDF - Hitachi Semiconductor
Part # HSB0104YP
Download  HSB0104YP Download
File Size   27.76 Kbytes
Page   5 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for High Speed Switching

HSB0104YP Datasheet (PDF)

Go To PDF Page Download Datasheet
HSB0104YP Datasheet PDF - Hitachi Semiconductor

Part # HSB0104YP
Download  HSB0104YP Click to download

File Size   27.76 Kbytes
Page   5 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for High Speed Switching

HSB0104YP Datasheet (HTML) - Hitachi Semiconductor


HSB0104YP Product details

Features
• Can be used for protection of signal-bus lines.
• The mounting efficiency has been improved by incorporating
   two low-loss diode element into a CMPAK-4 package.




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About Hitachi Semiconductor

Hitachi Semiconductor is a subsidiary of Hitachi, Ltd., a Japanese company that specializes in the design and manufacture of semiconductors.
The company was established in 1970 and is headquartered in Tokyo, Japan.
Hitachi Semiconductor offers a wide range of products including memory products, microcontrollers, power management ICs, and other analog and digital semiconductors.
The company's products are used in various applications such as consumer electronics, automotive systems, and industrial equipment.
Hitachi Semiconductor is known for its expertise in semiconductor technology and its ability to deliver high-quality and reliable products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized semiconductor solutions that meet their specific requirements and needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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