Electronic Components Datasheet Search
  Indian  ▼
ALLDATASHEET.IN

X  

Preview PDF HTML

G4BC30UD Datasheet (PDF) - International Rectifier
G4BC30UD Datasheet PDF - International Rectifier
Part # G4BC30UD
Download  G4BC30UD Download
File Size   234.03 Kbytes
Page   10 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

G4BC30UD Datasheet (PDF)

Go To PDF Page Download Datasheet
G4BC30UD Datasheet PDF - International Rectifier

Part # G4BC30UD
Download  G4BC30UD Click to download

File Size   234.03 Kbytes
Page   10 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

G4BC30UD Datasheet (HTML) - International Rectifier


G4BC30UD Product details

Features
• UltraFast: Optimized for high operating
   frequencies 8-40 kHz in hard switching, >200
   kHz in resonant mode
• Generation 4 IGBT design provides tighter
   parameter distribution and higher efficiency than
   Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
   ultra-soft-recovery anti-parallel diodes for use in
   bridge configurations
• Industry standard TO-220AB package

Benefits
• Generation -4 IGBTs offer highest efficiencies
   available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
   IGBTs . Minimized recovery characteristics require
   less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
   industry-standard Generation 3 IR IGBTs




Similar Part No. - G4BC30UD

ManufacturerPart #DatasheetDescription
logo
International Rectifier		 G4BC30KD IRF-G4BC30KD Datasheet
196Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
G4BC30W IRF-G4BC30W Datasheet
139Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
G4BC30W IRF-G4BC30W Datasheet
275Kb / 9P		 INSULATED GATE BIPOLAR TRANSISTOR
G4BC30W IRF-G4BC30W Datasheet
287Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR
More results


Similar Description - G4BC30UD

ManufacturerPart #DatasheetDescription
logo
International Rectifier		 IRG4BC10UD IRF-IRG4BC10UD Datasheet
184Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
IRG4BC15UD-S IRF-IRG4BC15UD-S Datasheet
210Kb / 12P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)
IRG4BC20FD-S IRF-IRG4BC20FD-S Datasheet
222Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
IRG4BC20UDS IRF-IRG4BC20UDS Datasheet
235Kb / 11P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
IRG4BC30U IRF-IRG4BC30U Datasheet
167Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IRG4BC30US IRF-IRG4BC30US Datasheet
308Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)
IRG4PC30U IRF-IRG4PC30U Datasheet
145Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IRG4PC30UD IRF-IRG4PC30UD Datasheet
211Kb / 10P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IRGBC30UD2 IRF-IRGBC30UD2 Datasheet
413Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A)
IRGPC30UD2 IRF-IRGPC30UD2 Datasheet
419Kb / 8P		 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A)
More results




About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com