| Manufacturer | Part # | Datasheet | Description |
 STMicroelectronics |
STN1802
|
51Kb / 4P |
HIGH CURRENT GAIN CHARACTERISTIC
Mar-2003 |
 Infinite Electronics In... |
STN1809
|
479Kb / 4P |
STN1809 DATA SHEET RF Load 2 Watts To 18 GHz Passivated Stainless Steel N Male
REV 2.0 |
 Stanson Technology |
STN1810
|
966Kb / 7P |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
 SHENZHEN DOINGTER SEMIC... |
STN1810
|
1Mb / 6P |
N-Channel MOSFET uses advanced trench technology
|
 VBsemi Electronics Co.,... |
STN1810
|
469Kb / 9P |
N-Channel 100 V (D-S) MOSFET
|