DMN4031SSD-13 datasheet(2/7 Pages) DIODES

2 / 7 page

DMN4031SSD

Document number: DS35410 Rev. 5 - 2

2 of 7

www.diodes.com

August 2016

DMN4031SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.42

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

RθJA

°C/W

Total Power Dissipation (Note 6)

2.6

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)

RθJA

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 10mA

Zero Gate Voltage Drain Current

IDSS

—

μA

VDS = 40V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.6

2.4

3.0

VDS = VGS, ID = 250μA

On-state drain current

ID(ON)

—

VGS = 10V, VDS = 5A

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 6A

—

VGS = 4.5V, ID = 5A

Forward Transfer Admittance

|YFS|

—

VDS = 5V, ID = 6A

Diode Forward Voltage

VSD

—

0.74

1.0

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS

—

945

—

VDS = 20V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Gate resistance

—

1.45

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

—

8.4

—

VGS = 10V, VDS = 20V,

ID = 12A

Total Gate Charge (VGS = 10V)

—

18.6

—

Gate-Source Charge

QGS

—

3.3

—

Gate-Drain Charge

QGD

—

2.2

—

Turn-On Delay Time

TD(ON)

—

6.4

—

VGS = 10V, VDS = 20V,

RL= 1.6Ω, RG= 3Ω

Turn-On Rise Time

—

9.7

—

Turn-Off Delay Time

TD(OFF)

—

19.8

—

Turn-Off Fall Time

—

3.1

—

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user

’s specific board design

6. Device mounted on 1

” x 1” FR-4PCB with high coverage 1 oz. copper, single sided.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 5) (VGS = 10V)

Steady

State

TA = +25°C

TA = +70°C

5.2

4.1

Continuous Drain Current (Note 5)

(VGS = 4.5V)

Steady

State

TA = +25°C

TA = +70°C

4.3

3.4

Continuous Drain Current (Note 6) (VGS = 10V)

Steady

State

TA = +25°C

TA = +70°C

7.0

5.6

Continuous Drain Current (Note 6) (VGS = 4.5V)

Steady

State

TA = +25°C

TA = +70°C

5.8

4.7

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current (Note 6)

2.2

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

ISM

Avalanche Current, L = 0.1mH (Note 7)

IAS

Avalanche Energy, L = 0.1mH (Note 7)

EAS

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