AP4P013LEP datasheet(4/6 Pages) A-POWER

Part #	AP4P013LEP

Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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4 / 6 page

AP4P013LEP

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

-4.5V

QGS

QGD

Charge

0.1

100

1000

0.1

100

-V DS , Drain-to-Source Voltage (V)

100us

1ms

10ms

T C =25

o C

Single Pulse

1020

30405060

Q G , Total Gate Charge (nC)

I D = -20A

V DS = -32V

2000

4000

6000

8000

1121

314151

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

012

345

-V GS , Gate-to-Source Voltage (V)

T j =150

o CT

j =25

o C

V DS = -5V

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

Operation in this

area limited by

RDS(ON)

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