2001 Feb 05

2

Philips Semiconductors

Product specification

Schottky barrier diode

BAS240

FEATURES

• Low forward voltage

• Guard ring protected

• Very small ceramic SMD package

• Low diode capacitance.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuit

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an integrated guard ring for stress protection.

handbook, 4 columns

MAM214

ka

cathode mark

top view

side view

bottom view

ak

Fig.1 Simplified outline (SOD110) and symbol.

Marking: A1.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

40

V

continuous forward current

−

120

mA

repetitive peak forward current

−

120

mA

non-repetitive peak forward current

−

200

mA

storage temperature

−65

+150

°C

junction temperature

−

150

°C