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STTH60P03S Datasheet(PDF) 2 Page - STMicroelectronics |
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STTH60P03S Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() STTH60P03S 2/6 Table 4: Thermal Parameters Table 5: Static Electrical Characteristics Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.88 x IF(AV) + 0.009 IF 2 (RMS) Table 6: Switching Characteristics Symbol Parameter Value Unit Rth(j-c) Junction to case 0.8 °C/W Zth(j-c) Transient thermal resistance at 1µs 0.002 °C/W Symbol Parameter Test conditions Min. Typ Max. Unit IR * Reverse leakage current Tj = 25°C VR = VRRM 100 µA Tj = 125°C 0.1 1 mA VF ** Forward voltage drop Tj = 25°C IF = 30A 1.5 V Tj = 125°C 0.9 1.15 Symbol Parameter Test conditions Min. Typ Max. Unit IRM Reverse recovery current Tj = 100°C IF = 60A VR = 100V dIF/dt = 200 A/µs 67.5 A Sfactor Softness factor 0.5 VFP Peak forward voltage Tj = 25°C IF = 60A dIF/dt = 400 A/µs 2.5 3.5 V |
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