MDF6N60TH datasheet(1/9 Pages) MGCHIP

Part #	MDF6N60TH

Description	N-Channel MOSFET 600V, 6A, 1.4ohm

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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1 / 9 page

Feb. 2009 Version 1.3

MagnaChip Semiconductor Ltd

.

1

`

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

MDP6N60

MDF6N60

Unit

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

TC=25

oC

6.0

6.0*

A

Continuous Drain Current

TC=100

oC

ID

3.8

3.8*

A

Pulsed Drain Current

(1)

IDM

24

24*

A

TC=25

oC

131

37.9

Power Dissipation

Derate above 25

oC

PD

1.05

0.3

W

W/

oC

Repetitive Avalanche Energy

(1)

EAR

13.1

mJ

Peak Diode Recovery dv/dt

(3)

dv/dt

4.5

V/ns

Single Pulse Avalanche Energy

(4)

EAS

220

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

* Id limited by maximum junction temperature

Thermal Characteristics

Characteristics

Symbol

MDP6N60

MDF6N60

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

Thermal Resistance, Junction-to-Case

(1)

RθJC

0.95

3.3

oC/W

MDP6N60/MDF6N60

N-Channel MOSFET 600V, 6A, 1.4Ω

General Description

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.

Features

VDS = 600V

ID = 6.0A

@ VGS = 10V

RDS(ON) ≤ 1.4

@ VGS = 10V

Applications

Power Supply

PFC

High Current, High Speed Switching

D

G

S

TO-220F

MDF Series

TO-220

MDP Series

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MDF6N60TH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

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