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IRF7420PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7420PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -11.5 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -9.2 A IDM Pulsed Drain Current -46 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 20 mW/°C VGS Gate-to-Source Voltage ±8 V TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C 8/11/04 www.irf.com 1 IRF7420PbF HEXFET® Power MOSFET These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique s. Description l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free PD - 95633 Parameter Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Thermal Resistance Absolute Maximum Ratings W Top View 8 1 2 3 4 5 6 7 D D D G S A D S S SO-8 VDSS RDS(on) max ID -12V 14m Ω@VGS = -4.5V - 11.5A 17.5m Ω@VGS = -2.5V -9.8A 26m Ω@VGS = -1.8V - 8.1A |
Similar Part No. - IRF7420PBF |
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Similar Description - IRF7420PBF |
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