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5KP60 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # 5KP60
Description  Transient Voltage Suppressor Diodes
PDF  4 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

5KP60 Datasheet(HTML) 1 Page - Diotec Semiconductor

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5KP6.5 ... 5KP110CA
5KP6.5 ... 5KP110CA
Transient Voltage Suppressor Diodes
Spannungs-Begrenzer-Dioden
PPPM = 5000 W
PM(AV) = 8.0 W
Tjmax = 175°C
VWM = 6.5 ... 110 V
VBR = 7.5 ... 130 V
Version 2018-08-29
Ø 8 x 7.5
(~P600)
Dimensions - Maße [mm]
Typical Applications
Over-voltage protection
ESD protection
Free-wheeling diodes
Commercial grade
Suffix -Q: AEC-Q101 compliant 1)
Suffix -AQ: in AEC-Q101 qualification 1)
Typische Anwendungen
Schutz gegen Überspannung
ESD-Schutz
Freilauf-Dioden
Standardausführung
Suffix -Q: AEC-Q101 konform 1)
Suffix -AQ: in AEC-Q101 Qualifikation 1)
Features
Uni- and Bidirectional versions
Peak pulse power of 5000 W
(10/1000 µs waveform)
Very fast response time
Package smaller than
industry standard
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Uni- und Bidirektionale Versionen
5000 W Impuls-Verlustleistung
(10/1000 µs Strom-Impuls)
Sehr schnelle Ansprechzeit
Gehäuse kleiner als
Industriestandard
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped in ammo pack
500
Gegurtet in Ammo-Pack
Weight approx.
1.5 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
For bidirectional types (add suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (ergänze Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings 2)
Grenzwerte 2)
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
PPPM
5000 W 3)
Steady state power dissipation − Verlustleistung im Dauerbetrieb
TA = 50°C
P
M(AV)
8 W 4)
Peak forward surge current
Stoßstrom in Fluss-Richtung
Half sine-wave
Sinus-Halbwelle
60 Hz (8.3 ms)
I
FSM
400 A 5)
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
Characteristics
Kennwerte
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
I
F = 100A
Tj = 25°C
VF
< 3.5 V 5)
Thermal resistance junction to ambient − Wärmewiderstand Sperrschicht – Umgebung
RthA
<16 K/W 4)
Thermal resistance junction to lead − Wärmewiderstand Sperrschicht − Anschlussdraht
RthL
< 4 K/W
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
3
Non-repetitive pulse see curve I
PP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I
PP = f (t) / PPP = f (t)
4
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
5
Unidirectional diodes only – Nur für unidirektionale Dioden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
Ø 1.2±0.05
Ø 8
±0.1


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