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ESDBK3V3 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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ESDBK3V3 Datasheet(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() ESDBK3V3 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Type Typ Junction capacitance Sperrschichtkapazität VR = 0 V, f = 1 MHz Stand-off voltage Sperrspannung Max. rev. current Max. Sperrstrom at / bei VWM Breakdown voltage Abbruch-Spannung IT = 1 mA Max. clamping voltage Max. Begrenzer-Spannung at / bei IPPM (8/20 µs) Cj [pF] VWM [V] ID [µA] VBR [V] VC [V] IPPM [A] ESDBK3V3 typ. 15 3.3 0.4 4 ... 6 9 7 Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1) 1 Mounted on P.C. board with 3 mm2 copper pads at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG 8/20µs - pulse waveform 8/20µs - Impulsform I PP P PP 100 80 60 40 20 0 0 t 20 40 60 [µs] [%] t P I /2 PPM P /2 PPM t = 8 µs r 120 100 80 60 40 20 0 [%] P PP [°C] T A 150 100 50 0 I PP Peak pulse power/current vs. ambient temperature ) Impuls-Spitzenleistung/Strom vs. Umgebungstemp. ) 1 1 |
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