SILICON EPIBASE PNP

DARLINGTON TRANSISTOR

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Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

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Document Number 8216

Issue 1

Page 1 of 2

BDS21

•

High DC Current Gain

•

Hermetic Metal TO-220 Package

•

Designed For General Purpose Amplifiers and

Low Speed Switching Applications

•

Screening Options Available

C = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

-80V

VCEO

Collector – Emitter Voltage

-80V

VEBO

Emitter – Base Voltage

-5V

IC

Continuous Collector Current

-5A

IB

Base Current

-0.1A

PD

Total Power Dissipation at

TC = 25°C

35W

Derate Above 25°C

0.2W/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

5

°C/W

** This datasheet supersedes document 7603