Electronic Components Datasheet Search
  Indian  ▼
ALLDATASHEET.IN

X  

Preview PDF HTML

FIR3N80FG Datasheet(PDF) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

Part # FIR3N80FG
Description  800V N-Channel MOSFET-D
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
Direct Link  http://www.first-semi.com
Logo FOSTER - Shenzhen Foster Semiconductor Co., Ltd.

FIR3N80FG Datasheet(HTML) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

  FIR3N80FG Datasheet HTML 1Page - Shenzhen Foster Semiconductor Co., Ltd. FIR3N80FG Datasheet HTML 2Page - Shenzhen Foster Semiconductor Co., Ltd. FIR3N80FG Datasheet HTML 3Page - Shenzhen Foster Semiconductor Co., Ltd. FIR3N80FG Datasheet HTML 4Page - Shenzhen Foster Semiconductor Co., Ltd. FIR3N80FG Datasheet HTML 5Page - Shenzhen Foster Semiconductor Co., Ltd. FIR3N80FG Datasheet HTML 6Page - Shenzhen Foster Semiconductor Co., Ltd. FIR3N80FG Datasheet HTML 7Page - Shenzhen Foster Semiconductor Co., Ltd. FIR3N80FG Datasheet HTML 8Page - Shenzhen Foster Semiconductor Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Electrical Characteristics (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID=250μA，VGS=0
800
-
-
V
△BVDSS/△TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA ,Reference
to 25℃
-
1
-
V/℃
IDSS
Zero Gate Voltage Drain Current
VDS=
800V, V
GS=0V
-
-
10
μA
VDS=
640V, Tj=125℃
100
IGSSF
Gate-body leakage Current,
Forward
VGS=+30V, VDS=0V
-
-
100
nA
IGSSR
Gate-body leakage Current,
Reverse
VGS=-30V, VDS=0V
-
-
-100
On Characteristics
VGS(TH)
Date Threshold Voltage
ID=250μA,VDS=VGS
3
-
5
V
RDS(ON)
Static Drain-Source
On-Resistance
ID=
1.5A,V
GS=10V
-
-
5
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V，VGS=0，
f=1.0MHz
-
705
-
pF
Coss
Output Capacitance
-
57
-
Crss
Reverse Transfer Capacitance
-
7
-
Switching Characteristics
Td(on)
Turn-On Delay Time
VDD=
400V，I
D=
3A
RG=25Ω (Note 3,4)
-
15
40
n
S
Tr
Turn-On Rise Time
-
40
90
Td(off)
Turn-Off Delay Time
-
30
70
Tf
Turn-Off Rise Time
-
30
70
Qg
Total Gate Charge
VDS=
640V,V
GS=10V，
ID=
3A (Note 3,4)
-
13
16.5
nC
Qgs
Gate-Source Charge
-
3.5
-
Qgd
Gate-Drain Charge
-
7.7
-
Drain-Source Diode Characteristics and Maximum Ratings
Is
Max. Diode Forward Current
-
-
-
3
A
ISM
Max. Pulsed Forward Current
-
-
-
12
VSD
Diode Forward Voltage
ID=
3A
-
-
1.4
V
Trr
Reverse Recovery Time
IS=
3A,V
GS =0V
diF/dt=100A/
μs
(Note3)
-
635
-
nS
Qrr
Reverse Recovery Charge
-
4.2
-
μC
Notes : 1, L=
66.7mH, IAS=3A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width
≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
www.First-semi.com
Page 2/8
FIR3N80FG



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com