1N60-TN3-R datasheet(3/8 Pages) ARTSCHIP

Part #	1N60-TN3-R

Description	N-CHANNEL MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]

Direct Link	http://www.artschip.com/

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3 / 8 page

1N60

Power MOSFET

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ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Switching Characteristics

Turn-On Delay Time

tD (ON)

Rise Time

Turn-Off Delay Time

tD(OFF)

Fall Time

VDD =300V, ID =1.2A, RG=50Ω

(Note 1,2)

Total Gate Charge

9.0

6.0

Gate-Source Charge

QGS

1.0

Gate-Drain Charge

QGD

VDS=480V, VGS=10V, ID=2.4A

(Note 1, 2)

2.6

Drain-Source Diode Characteristics

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 1.2 A

1.4

Continuous Drain-Source Current

ISD

1.2

Pulsed Drain-Source Current

ISM

4.8

Reverse Recovery Time

tRR

160

Reverse Recovery Charge

QRR

VGS = 0 V, ISD = 1.2A,

di/dt = 100 A/µs (Note1)

0.3

µC

Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%

2. Essentially Independent of Operating Temperature

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