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2

SM2223PSQG

Copyright

© Sinopower Semiconductor, Inc.

Rev. A.4 - November, 2014

®

Symbol

Parameter

Rating

Unit

Drain-Source Voltage

-12

V

GSS

Gate-Source Voltage

±8

V

T

-11

a

T

-8.8

a

-44 *

a

Diode Continuous Forward Current

-3

A

L=0.1mH

28

c

Avalanche Current, Single pulse

L=0.5mH

16

A

L=0.1mH

39

c

Avalanche Energy, Single pulse

L=0.5mH

64

mJ

Maximum Junction Temperature

150

Storage Temperature Range

-55 to 150

°C

2.5

a

Maximum Power Dissipation

1.6

W

t

≤ 10s

50

a,b

Thermal Resistance-Junction to Ambient

Steady State

80

°C/W

Note *：Current limited by bond wire.

Note a：Surface Mounted on 1in

2

pad area, t

≤ 10sec.

Note b：Maximum under Steady State conditions is 75

°C/W.

Note c：UIS tested and pulse width limited by maximum junction temperature 150