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PRM016N11CTF Datasheet(PDF) 1 Page - PFC Device Inc. |
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PRM016N11CTF Datasheet(HTML) 1 Page - PFC Device Inc. |
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1 / 8 page  110V Single N-Channel MOSFET Apr-2016 Version 4.0 1 / 8 PFC Device Corporation PRM016N11CTF www.pfc-device.com Major ratings and characteristics Characteristics Values Units VDS 110 V ID (TC=25℃) 26.9 A Max. RDS(ON)@VGS=10V 16 m TJ Operating Junction Temperature -55 to +150 oC General Description The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency fast switching applications. Typical Applications Charger Adapter Power Tools LED Lighting Features Max. RDS(ON)=16mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available PRM016N11CTF ITO-220 G D S |
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