SM3424NHQA datasheet(3/11 Pages) SINOPWER

3 / 11 page

SM3424NHQA

www.sinopowersemi.com

Rev. A.1 - October, 2015

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

BVDSSt

Drain-Source Breakdown Voltage

(transient)

VGS=0V, ID(aval)=35A

Tcase=25°C, ttransient=100ns

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250mA

1.4

1.7

2.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±12

RDS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=15A

2.8

3.4

TJ=125°C

4.35

VGS=4.5V, IDS=10A

3.9

5.1

Gfs

Forward Transconductance

VDS=5V, IDS=10A

Diode Characteristics

VSD

Diode Forward Voltage

ISD=10A, VGS=0V

0.77

1.1

trr

Reverse Recovery Time

ISD=5A, dlSD/dt=100A/ms,

Vdd=15V

Charge Time

Discharge Time

Qrr

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

0.8

1.8

Ciss

Input Capacitance

VGS=0V,

VDS=15V,

Frequency=1.0MHz

1820

Coss

Output Capacitance

1100

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=15V, RL=15W,

IDS=1A, VGEN=10V,

RG=1W

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

VDS=15V, VGS=10V,

IDS=15A

Total Gate Charge

VDS=15V, VGS=4.5V,

IDS=15A

13.4

Qgth

Threshold Gate Charge

2.5

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

4.5

Note d：Pulse test ; pulse width

£300ms, duty cycle£2%.

Electrical Characteristics (T

A = 25°C unless otherwise noted)

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