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2

SM3433NHQG

Copyright

© Sinopower Semiconductor, Inc.

Rev. A.2 - May, 2015

®

Symbol

Parameter

Rating

Unit

Common Ratings

Drain-Source Voltage

40

V

GSS

Gate-Source Voltage

±20

V

T

J

Maximum Junction Temperature

150

T

STG

Storage Temperature Range

-55 to 150

°C

I

S

Diode Continuous Forward Current

T

50

a

T

50

a

I

D

Continuous Drain Current

T

50

Pulsed Drain Current

200

b

A

62.5

Maximum Power Dissipation

25

W

Thermal Resistance-Junction to Case

Steady State

2

°C/W

24

Continuous Drain Current

19

A

1.78

Maximum Power Dissipation

T

1.14

W

t

≤ 10s

35

Thermal Resistance-Junction to Ambient

Steady State

c

70

°C/W

I

AS

d

Avalanche Current, Single pulse

L=0.1mH

50

A

E

AS

d

Avalanche Energy, Single pulse

L=0.1mH

125

mJ

Note a：Package is limited by 50A.

Note b：Pulse width is limited by maximum junction temperature.

Note c：Surface Mounted on 1in

≤ 999s.

Note d：UIS tested and pulse width is limited by maximum junction temperature 150