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SM4026NSUC Datasheet(PDF) 2 Page - Sinopower Semiconductor Inc |
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SM4026NSUC Datasheet(HTML) 2 Page - Sinopower Semiconductor Inc |
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2 / 10 page ![]() SM4026NSUC www.sinopowersemi.com 2 Copyright © Sinopower Semiconductor, Inc. Rev. A.3 - July, 2015 ® Symbol Parameter Rating Unit Common Ratings V DSS Drain-Source Voltage 40 V GSS Gate-Source Voltage ±20 V T J Maximum Junction Temperature 150 T STG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current TC=25°C 30 TC=25°C 67 ID Continuous Drain Current TC=100°C 42 IDM a Pulsed Drain Current TC=25°C 200 A TC=25°C 54 PD Maximum Power Dissipation T C=100°C 21 W RθJC Thermal Resistance-Junction to Case Steady State 2.3 °C/W T A=25°C 14 I D Continuous Drain Current T A=70°C 11 A T A=25°C 2.5 P D Maximum Power Dissipation TA=70°C 1.6 W t ≤ 10s 20 RθJA c Thermal Resistance-Junction to Ambient Steady State 50 °C/W IAS b Avalanche Current, Single pulse L=0.5mH 18 A EAS b Avalanche Energy, Single pulse L=0.5mH 81 mJ Note a:Pulse width limited by max. junction temperature. Note b:UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature Tj=25oC). Note c:Surface Mounted on 1in 2 pad area, steady state t =999s. Absolute Maximum Ratings (T A = 25°C Unless Otherwise Noted) |
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