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SM4026NSUC Datasheet(PDF) 2 Page - Sinopower Semiconductor Inc

Part # SM4026NSUC
Description  N-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  SINOPWER [Sinopower Semiconductor Inc]
Direct Link  http://www.sinopowersemi.com/Form2/index.aspx
Logo SINOPWER - Sinopower Semiconductor Inc

SM4026NSUC Datasheet(HTML) 2 Page - Sinopower Semiconductor Inc

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SM4026NSUC
www.sinopowersemi.com
2
Copyright
© Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
®
Symbol
Parameter
Rating
Unit
Common Ratings
V
DSS
Drain-Source Voltage
40
V
GSS
Gate-Source Voltage
±20
V
T
J
Maximum Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
°C
IS
Diode Continuous Forward Current
TC=25°C
30
TC=25°C
67
ID
Continuous Drain Current
TC=100°C
42
IDM
a
Pulsed Drain Current
TC=25°C
200
A
TC=25°C
54
PD
Maximum Power Dissipation
T
C=100°C
21
W
RθJC
Thermal Resistance-Junction to Case
Steady State
2.3
°C/W
T
A=25°C
14
I
D
Continuous Drain Current
T
A=70°C
11
A
T
A=25°C
2.5
P
D
Maximum Power Dissipation
TA=70°C
1.6
W
t
≤ 10s
20
RθJA
c
Thermal Resistance-Junction to Ambient
Steady State
50
°C/W
IAS
b
Avalanche Current, Single pulse
L=0.5mH
18
A
EAS
b
Avalanche Energy, Single pulse
L=0.5mH
81
mJ
Note a:Pulse width limited by max. junction temperature.
Note b:UIS tested and pulse width limited by maximum junction temperature 150
oC (initial temperature Tj=25oC).
Note c:Surface Mounted on 1in
2 pad area, steady state t =999s.
Absolute Maximum Ratings (T
A = 25°C Unless Otherwise Noted)



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