SM4039NHKP datasheet(3/11 Pages) SINOPWER

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SM4039NHKP

Rev. A.2 - November, 2018

www.sinopowersemi.com

Electrical Characteristics (TA= 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

IDSS

Zero Gate Voltage Drain Current

VDS=32V, VGS=0V

TJ=85°C

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=250mA

1.4

1.8

2.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±10

RDS(ON) d Drain-Source On-state Resistance

VGS=10V, IDS=20A

5.6

6.7

TJ=125°C

9.2

VGS=4.5V, IDS=15A

7.9

10.3

Gfs

Forward Transconductance

VDS=5V, IDS=15A

Diode Characteristics

VSD d

Diode Forward Voltage

ISD=20A, VGS=0V

0.85

1.1

trr

Reverse Recovery Time

IDS=20A, dlSD/dt=100A/ms

18.3

Charge Time

Discharge Time

10.2

Qrr

Reverse Recovery Charge

6.4

Dynamic Characteristics e

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

1.5

Ciss

Input Capacitance

VGS=0V,

VDS=20V,

Frequency=1.0MHz

911

1185

Coss

Output Capacitance

222

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=20V, RL=20W,

IDS=1A, VGEN=10V,

RG=6W

11.3

Turn-on Rise Time

8.2

td(OFF)

Turn-off Delay Time

22.6

Turn-off Fall Time

15.4

Gate Charge Characteristics e

Total Gate Charge

VDS=20V, VGS=10V,

IDS=20A

Total Gate Charge

VDS=20V, VGS=4.5V,

IDS=20A

7.1

Qgth

Threshold Gate Charge

1.65

Qgs

Gate-Source Charge

3.2

Qgd

Gate-Drain Charge

1.9

Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%.

Note e：Guaranteed by design, not subject to production testing.

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