www.sinopowersemi.com

2

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.7 - June, 2016

®

SM4301PSU/SM4301PSUC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

-30

-

-

V

-

-

-1

Zero Gate Voltage Drain Current

-

-

-30

mA

-1.3

-1.8

-2.3

V

Gate Leakage Current

-

-

±100

nA

-

5.2

6.5

-

8.5

11.5

m

W

Note a：Pulse width limited by max. junction temperature.

Note b：UIS tested and pulse width limited by maximum junction temperature 150

Symbol

Parameter

Rating

Unit

Common Ratings

Drain-Source Voltage

-30

V

Gate-Source Voltage

±25

Maximum Junction Temperature

150

°C

Storage Temperature Range

-55 to 150

Diode Continuous Forward Current

-30

A

Continuous Drain Current

-88

-55

Pulsed Drain Current

-352

a

Maximum Power Dissipation

78

W

31

Thermal Resistance-Junction to Case

Steady State

1.6

°C/W

Continuous Drain Current

-25

A

-20

Maximum Power Dissipation

6.3

W

4

Thermal Resistance-Junction to Ambient

t

£ 10s

20

°C/W

Steady State

55

c

Avalanche Current, Single pulse

L=0.1mH

-42

A

c

Avalanche Energy, Single pulse

L=0.1mH

88

mJ